시장보고서
상품코드
1928675

6인치 실리콘 카바이드 웨이퍼 시장, 웨이퍼 유형별, 결정 구조별, 도핑 유형별, 성장 기술별, 용도별, 최종사용자별 - 예측(2026-2032년)

6 Inch Silicon Carbide Wafer Market by Wafer Type, Crystal Structure, Doping Type, Growth Technique, Application, End User - Global Forecast 2026-2032

발행일: | 리서치사: 360iResearch | 페이지 정보: 영문 187 Pages | 배송안내 : 1-2일 (영업일 기준)

    
    
    




■ 보고서에 따라 최신 정보로 업데이트하여 보내드립니다. 배송일정은 문의해 주시기 바랍니다.

6인치 실리콘 카바이드 웨이퍼 시장은 2025년에 13억 2,000만 달러로 평가되었습니다. 2026년에는 15억 7,000만 달러로 성장하고, CAGR 20.35%로 성장을 지속하여 2032년까지 48억 5,000만 달러에 이를 것으로 예측됩니다.

주요 시장 통계
기준 연도 : 2025년 13억 2,000만 달러
추정 연도 : 2026년 15억 7,000만 달러
예측 연도 : 2032년 48억 5,000만 달러
CAGR(%) 20.35%

6인치 실리콘 카바이드 웨이퍼의 채택을 촉진하는 기술적, 상업적, 전략적 요인을 개괄하는 간결하고 권위 있는 서론

본 Executive Summary에서는 6인치 실리콘 카바이드 웨이퍼의 가장 중요한 기술적, 상업적 측면을 소개합니다. 재료 과학, 제조 확장성, 최종 사용자 수요가 어떻게 융합되어 전략적 선택을 형성하는지에 초점을 맞추었습니다. 이 웨이퍼 플랫폼은 고전압 전력 변환, 고주파 반도체, 센싱 플랫폼, 차세대 조명의 교차점에 위치하고 있으며, 기판 유형, 결정 방향, 도핑 프로파일, 에피택셜 공정에 대한 결정은 디바이스 아키텍처와 시스템 레벨의 성능에 직접적인 영향을 미칩니다. 직접적인 영향을 미칩니다.

급속한 기술 혁신, 공급망 재편, 수요 측의 진화로 6인치 SiC 웨이퍼경쟁 구도 재구축

6인치 실리콘 카바이드(SiC) 웨이퍼 시장 환경은 결정 성장 기술의 점진적 개선을 넘어 여러 차례의 변혁적 전환을 경험하고 있습니다. 첫째, 에피택시 기술과 결함 감소 기술의 전환점이 디바이스 설계 제약 조건을 근본적으로 변화시켜 디바이스 제조업체가 활용할 수 있는 고내압화 및 열 성능 향상을 실현했습니다. 그 결과, 재료 기술자와 디바이스 설계자들은 보다 엄격한 균일성과 낮은 전위 밀도에 의존하는 공격적인 설계를 채택하고 있으며, 이는 고품질 웨이퍼의 가치를 더욱 높이고 있습니다.

2025년 미국의 관세 조치가 실리콘 카바이드 웨이퍼 공급망 전반의 조달, 생산 비용, 조달 전략에 미치는 누적 영향 평가

2025년 미국이 도입한 관세 조치는 조달, 제조 경제성, 공급업체 선정 과정 전반에 걸쳐 일련의 업무적, 전략적 영향을 연쇄적으로 발생시켰습니다. 조달 측면에서 구매자는 총착륙비용 모델을 재검토하고 공급 탄력성, 현지 조달 비율, 재고 헤징을 더 중시하는 개정된 공급업체 평가 기준을 도입했습니다. 그 결과, 많은 구매 조직은 관세 변동과 국경에서의 지연에 대비하기 위해 보다 엄격한 이중 소싱 전략을 수립하고 중요 기판의 완충 재고를 강화했습니다.

제품 전략 수립에 도움이 되는 용도, 최종사용자, 웨이퍼 유형, 결정구조, 도핑 유형, 성장기술에 걸친 실질적인 세분화 분석

부문 수준의 차별화가 중요한 이유는 용도, 최종 사용자, 웨이퍼 유형, 결정 구조, 도핑, 성장 기술의 조합에 따라 공급업체 선정 및 인증 프로세스에 영향을 미치는 고유한 기술적, 상업적 제약이 존재하기 때문입니다. 예를 들어, 용도 세분화에는 LED 조명, MEMS 및 센서, 파워 일렉트로닉스, 고주파 장치, 태양광이 포함되며, 파워 일렉트로닉스는 전기자동차 충전, 산업용 드라이브, 재생 에너지용 인버터로 세분화됩니다. 이러한 용도 클러스터는 결함 밀도에 대한 허용 오차, 필요한 웨이퍼 균일성, 인증 주기에서 크게 다르며, 이는 비용과 성능의 허용 가능한 트레이드오프를 형성합니다.

미주, 유럽-중동 및 아프리카, 아시아태평양 수요 요인, 공급 동향, 투자 우선순위에 대한 인사이트력, 지역별로 집중 분석

지역별 동향은 6인치 SiC 기판공급망 결정, 자본 배분, 파트너십 모델에 큰 영향을 미칩니다. 미주 지역에서는 전기화, 재생 에너지 통합, 산업 자동화에 대한 대규모 투자가 수요를 주도하고 있으며, 이는 전력용 기판과 고신뢰성 웨이퍼에 대한 지속적인 관심을 불러일으키고 있습니다. 정책적 인센티브와 지역 밀착형 제조 이니셔티브와 함께, 공급망 투명성과 짧은 인증 주기를 중요시하는 고객에게는 북미 조달처가 더욱 매력적으로 다가오고 있습니다.

주요 실리콘 카바이드 웨이퍼 기업의 기업 전략, 생산능력 투자, 기술 로드맵, 파트너십, 경쟁적 포지셔닝 분석

주요 실리콘 카바이드 웨이퍼 기업의 전략은 경쟁 우위를 형성하는 통합, 계획적인 생산 능력 확대, 집중적인 기술 개발이 결합된 전략입니다. 많은 업계 관계자들은 에피택셜 반응로 기술, 첨단 연마 기술, 보다 엄격한 결함 관리에 대한 투자를 우선시하고 있으며, 이는 장치의 편차를 직접적으로 줄이고 고객의 인증 기간을 단축시킬 수 있습니다. 동시에, 기업들은 장기적인 수요 전망을 확보하기 위해 장치 제조업체 및 조립 공장과의 제휴를 추진하고 있으며, 안정적인 생산 시작 시간을 단축하는 공정 레시피를 공동 개발하고 있습니다.

업계 리더이 회복탄력성 강화, 기술 도입 가속화, 가치사슬 최적화, 새로운 가치 창출을 실현할 수 있는 실용적 제안

업계 리더은 시장 지위와 비즈니스 연속성을 강화하기 위해 명확하고 실행 가능한 일련의 노력을 우선순위에 두어야 합니다. 첫째, 공급망 탄력성을 조달 전략에 반영합니다. 구체적으로, 벤더 풀을 다양화하고, 2차 공급업체를 인증하고, 전략적 완충 재고를 구축하여 관세로 인한 관세 및 물류 관련 혼란을 줄입니다. 이를 통해 단일 공급처에 대한 의존도를 낮추고, 갑작스러운 무역 문제 발생 시에도 생산의 연속성을 유지할 수 있습니다.

시장 인사이트를 위한 주요 인터뷰, 2차 조사, 데이터 삼각측량, 검증 절차, 품질 보증을 설명하는 투명한 조사 기법

이 조사 접근법은 구조화된 1차 정보 수집과 엄격한 2차 검증을 결합하여 확실한 실무적 지식을 창출합니다. 1차 자료는 기술 리더, 조달 책임자, 공정 엔지니어와의 심층 인터뷰를 통해 실제 인증 일정, 웨이퍼 조달의 문제점, 성능 속성의 상대적 중요성 등을 파악했습니다. 이러한 직접적인 대화를 통해 공급업체 적합성에 대한 정성적 평가와 다양한 웨이퍼 유형 및 성장 기술에 따른 실질적인 제약에 대한 인사이트력을 얻을 수 있었습니다.

실리콘 카바이드 웨이퍼의 가치사슬 전반에 걸친 전략적 우선순위, 기술 전환점, 이해관계자를 위한 실무적 고려사항에 대한 통합적 요약

결론적으로, 6인치 실리콘 카바이드 웨이퍼 분야는 재료 혁신, 공급망 전략, 최종 사용자 수요가 교차하여 상업적 성공을 결정짓는 중요한 분기점에 있습니다. 결정 성장, 에피택시, 결함 제어의 기술 발전으로 디바이스 성능의 한계가 확대되는 한편, 전기화 및 RF 인프라 확장 등의 상업적 요인으로 인해 기판이 충족해야 하는 성능 요구사항이 다양해졌습니다. 그 결과, 공급업체와 디바이스 제조업체는 이중의 문제에 직면하고 있습니다. 즉, 프로세스 역량을 지속적으로 향상시키는 동시에 보다 견고하고 유연한 조달 모델을 설계하는 것입니다.

자주 묻는 질문

  • 6인치 실리콘 카바이드 웨이퍼 시장 규모는 어떻게 예측되나요?
  • 6인치 실리콘 카바이드 웨이퍼의 채택을 촉진하는 요인은 무엇인가요?
  • 2025년 미국의 관세 조치가 실리콘 카바이드 웨이퍼 공급망에 미치는 영향은 무엇인가요?
  • 6인치 실리콘 카바이드 웨이퍼 시장의 주요 용도는 무엇인가요?
  • 6인치 실리콘 카바이드 웨이퍼 시장의 지역별 동향은 어떻게 되나요?
  • 주요 실리콘 카바이드 웨이퍼 기업의 전략은 무엇인가요?

목차

제1장 서문

제2장 조사 방법

제3장 주요 요약

제4장 시장 개요

제5장 시장 인사이트

제6장 미국 관세의 누적 영향, 2025

제7장 AI의 누적 영향, 2025

제8장 6인치 실리콘 카바이드 웨이퍼 시장 웨이퍼 유형별

제9장 6인치 실리콘 카바이드 웨이퍼 시장 결정 구조별

제10장 6인치 실리콘 카바이드 웨이퍼 시장 도핑 유형별

제11장 6인치 실리콘 카바이드 웨이퍼 시장 성장 기술별

제12장 6인치 실리콘 카바이드 웨이퍼 시장 : 용도별

제13장 6인치 실리콘 카바이드 웨이퍼 시장 : 최종사용자별

제14장 6인치 실리콘 카바이드 웨이퍼 시장 : 지역별

제15장 6인치 실리콘 카바이드 웨이퍼 시장 : 그룹별

제16장 6인치 실리콘 카바이드 웨이퍼 시장 : 국가별

제17장 미국의 6인치 실리콘 카바이드 웨이퍼 시장

제18장 중국의 6인치 실리콘 카바이드 웨이퍼 시장

제19장 경쟁 구도

The 6 Inch Silicon Carbide Wafer Market was valued at USD 1.32 billion in 2025 and is projected to grow to USD 1.57 billion in 2026, with a CAGR of 20.35%, reaching USD 4.85 billion by 2032.

KEY MARKET STATISTICS
Base Year [2025] USD 1.32 billion
Estimated Year [2026] USD 1.57 billion
Forecast Year [2032] USD 4.85 billion
CAGR (%) 20.35%

A concise, authoritative introduction framing the technological, commercial, and strategic forces driving adoption of six-inch silicon carbide wafers

This executive summary introduces the technical and commercial contours that matter most for six-inch silicon carbide wafers, focusing on how materials science, manufacturing scalability, and end-user demand converge to shape strategic choices. The wafer platform sits at the intersection of high-voltage power conversion, radio-frequency semiconductors, sensing platforms, and next-generation lighting, and therefore decisions about substrate type, crystal orientation, doping profiles, and epitaxial processes carry immediate implications for device architecture and system-level performance.

From a technical vantage, advances in epitaxial uniformity and defect control have reduced device variability, while throughput gains at wafer fabs are enabling more reliable qualification cycles for power and RF customers. From a commercial vantage, demand-side forces driven by electrification, renewable energy integration, and telecommunications densification are altering procurement cadences and qualification priorities. As a result, procurement leaders and R&D teams must align on wafer specifications, qualification timelines, and partnership models that balance cost, yield, and time-to-market. Moving forward, the interplay between manufacturing innovation and end-user requirements will determine which wafer types and growth techniques become preferred for high-volume, high-reliability applications.

Rapid technological breakthroughs, supply chain realignment, and demand-side evolution reshaping the competitive landscape for six-inch SiC wafers

The landscape for six-inch silicon carbide wafers has undergone several transformative shifts that extend beyond incremental improvements in crystal growth. First, technology inflection points in epitaxy and defect mitigation have materially changed device design constraints, enabling higher breakdown voltages and improved thermal performance that device makers can exploit. Consequently, materials engineers and device architects are adopting more aggressive designs that rely on tighter uniformity and lower dislocation densities, which in turn amplify the value of high-quality substrates.

Second, supply chain realignment and vertical integration among substrate producers, foundries, and device manufacturers are redefining commercial relationships. Firms are increasingly negotiating long-term supply agreements and co-investing in capacity to secure predictable wafer supply and accelerate qualification cycles. At the same time, production economics are adapting to capital expenditures for larger diameter process equipment and advanced epitaxial reactors, which change vendor differentiation away from purely price-based competition toward joint technology roadmaps.

Third, demand dynamics have shifted as electrification, grid modernization, and RF infrastructure expansion create differentiated requirements by application. This divergence is prompting a more modular supplier landscape, where specialized wafer types and doping profiles cater to discrete end markets. As a result, companies that align process capabilities with clear end-user requirements are positioned to capture sustained strategic advantage.

Evaluating cumulative effects of US tariff actions in 2025 on procurement, production costs and sourcing strategies across the silicon carbide wafer supply chain

United States tariff actions adopted in 2025 have produced a cascade of operational and strategic effects across procurement, manufacturing economics, and supplier selection processes. In procurement, buyers revisited total landed cost models and introduced revised supplier evaluation criteria that place greater weight on supply resilience, local content, and inventory hedging. Consequently, many purchasing organizations instituted more rigorous dual-sourcing strategies and increased buffer inventories for critical substrates to guard against tariff volatility and border delays.

On the production front, tariffs created a near-term uplift in per-unit costs for certain imported inputs, prompting manufacturers to re-evaluate process footprints and consider incremental onshore investments where cost-to-serve justified capital allocation. The combination of elevated customs costs and slower cross-border logistics has also encouraged strategic inventory placement closer to end customers, reducing lead times for qualification wafers and accelerating time-to-reliability testing.

Strategically, tariffs prompted an acceleration of supplier diversification and regional sourcing initiatives. Companies initiated engagement with second-tier suppliers and alternative material pathways to mitigate exposure to episodic trade actions. Moreover, the policy environment increased the importance of proactive engagement with trade attorneys and government relations teams to anticipate changes and to shape sourcing decisions with a longer-term lens on resilience and compliance.

Practical segmentation insights across application, end user, wafer type, crystal structure, doping type, and growth technique to inform product strategy

Segment-level differentiation matters because each combination of application, end user, wafer type, crystal structure, doping, and growth technique imposes unique technical and commercial constraints that influence supplier selection and qualification pathways. For example, the application segmentation encompasses LED Lighting, MEMS and Sensors, Power Electronics, Radio Frequency Devices, and Solar, with Power Electronics further subdivided into Electric Vehicle Charging, Industrial Drives, and Renewable Energy Inverters. These application clusters differ significantly in their tolerance for defect density, required wafer uniformity, and qualification cadence, which in turn shapes the acceptable trade-offs between cost and performance.

End-user segmentation covers Aerospace and Defense, Automotive, Consumer Electronics, Industrial, and Telecommunication, with Automotive further split into Conventional Vehicles, Electric Vehicles, and Hybrid Vehicles. Stakeholder priorities vary across these categories: aerospace demands the most stringent traceability and reliability protocols, while certain consumer electronics applications prioritize cost and volume. Wafer type segmentation-Bulk Substrate, Epitaxial Wafer, and Polished Substrate-reflects differing process flows and device integration strategies, and decisions here directly influence downstream epitaxy and device yield.

Crystal structure segmentation includes 3C SiC, 4H SiC, and 6H SiC, each offering distinct electronic properties that inform device design, while doping type segmentation across N Type, P Type, and Semi Insulating dictates carrier control for power and RF devices. Finally, growth technique choices-Chemical Vapor Deposition, Physical Vapor Transport, and Sublimation Epitaxy-carry implications for defect profiles, throughput, and scale economics. Taken together, these segmentation lenses enable a granular assessment of qualification risk, supplier fit, and product roadmap alignment.

Regionally focused insights into demand drivers, supply dynamics, and investment priorities across the Americas, Europe Middle East & Africa, and Asia-Pacific

Regional dynamics strongly influence supply chain decisions, capital allocation, and partnership models for six-inch silicon carbide substrates. In the Americas, demand is driven by heavy investment in electrification, renewable integration, and industrial automation, which creates sustained interest in power-grade substrates and higher reliability wafers. Policy incentives and localized manufacturing initiatives have also made North American sourcing more attractive for customers that prioritize supply chain transparency and shorter qualification cycles.

Europe, Middle East & Africa exhibits a heterogeneous set of drivers: Europe emphasizes energy efficiency, grid modernization, and automotive electrification, while select Middle Eastern markets combine rapid infrastructure expansion with strategic industrial investments. This region's regulatory environment and emphasis on sustainability are encouraging adoption of substrates that enable high-efficiency power conversion and improved thermal management. As a result, suppliers that demonstrate robust environmental compliance and lifecycle transparency are often preferred here.

Asia-Pacific is characterized by concentrated manufacturing ecosystems, dense electronics supply chains, and aggressive investment in both device fabrication and materials science. The region continues to lead on volume-focused applications and provides a deep pool of equipment and process engineering talent. Consequently, Asia-Pacific remains a critical locus for capacity scaling and for rapid prototype-to-production cycles, though geopolitical and trade dynamics are prompting a re-evaluation of nearshoring and diversified regional footprints.

Analysis of company strategies, capacity investments, technology roadmaps, partnerships, and competitive positioning among leading silicon carbide wafer firms

Corporate strategies among leading silicon carbide wafer firms illustrate a mix of consolidation, targeted capacity expansion, and focused technology development that shapes competitive advantage. Many industry participants are prioritizing investments in epitaxial reactor technology, advanced polishing techniques, and tighter defect control, which directly reduce device variability and shorten customer qualification timelines. At the same time, firms are pursuing partnerships with device manufacturers and assembly houses to lock in longer-term demand visibility and to co-develop process recipes that accelerate time-to-reliable-production.

A second dynamic is the use of tiered supply models: core high-reliability customers are served through committed capacity agreements, while more price-sensitive segments are met through spot or secondary channels. This approach allows companies to optimize utilization and margin while maintaining flexibility for new product introductions. Intellectual property and process know-how have become differentiators, as proprietary epitaxial processes and polishing methods create measurable performance gaps in device yield and efficiency.

Finally, strategic collaboration between substrate producers and equipment OEMs is accelerating the deployment of next-generation growth tools and inline metrology. These collaborative investments aim to reduce per-wafer defect rates and to scale throughput without sacrificing critical material properties, thereby enabling suppliers to better align capacity with evolving device requirements.

Actionable recommendations for industry leaders to enhance resilience, accelerate technology adoption, optimize supply chains, and unlock emerging value pools

Leaders in this industry should prioritize a set of clear, actionable initiatives to strengthen market position and operational resilience. First, integrate supply-chain resilience into sourcing strategies by diversifying vendor pools, qualifying secondary suppliers, and establishing strategic buffer inventories to mitigate tariff-driven and logistics-related disruptions. This approach reduces single-source dependence and preserves production continuity during episodic trade events.

Second, accelerate targeted investments in process innovation where technical improvements deliver clear downstream value-such as reductions in dislocation density or improved epitaxial layer control-rather than pursuing broad capital expansion without mapped customer commitments. Align R&D roadmaps with high-value end-user segments to ensure that technical advances translate into commercially differentiable device performance.

Third, pursue collaborative commercial models with device manufacturers that couple committed off-take with joint qualification roadmaps. These models shorten qualification cycles, enable co-optimization of process recipes, and reduce time-to-volume for critical applications. Fourth, maintain active engagement with policy and trade advisors to anticipate regulatory changes that affect cross-border flows. Taken together, these actions will improve operational stability and create pathways to profitable growth.

Transparent methodology describing primary interviews, secondary research, data triangulation, validation procedures, and quality assurance for market insight

The research approach combines structured primary intelligence with rigorous secondary verification to produce robust, actionable findings. Primary inputs included in-depth interviews with technical leaders, procurement executives, and process engineers to capture real-world qualification timelines, pain points in wafer sourcing, and the relative importance of performance attributes. These first-hand conversations informed qualitative assessments of supplier fit and the practical constraints associated with different wafer types and growth techniques.

Secondary research encompassed peer-reviewed technical literature, public company disclosures, patents, and trade publications to map technology trajectories and to corroborate claims about process innovations and equipment capabilities. Data triangulation procedures were applied to reconcile discrepancies between sources, and validation protocols included follow-up interviews and cross-referencing of reported process metrics against independent technical papers. Quality assurance measures ensured that findings reflect reproducible technical facts and widely observed industry practices, while confidentiality safeguards protected proprietary information contributed by interviewees.

This blended methodology balances depth and objectivity, resulting in insights that are both technically grounded and commercially relevant for stakeholders seeking to inform sourcing, R&D, and strategic partnership decisions.

Concluding synthesis of strategic priorities, technology inflection points, and practical considerations for stakeholders across the silicon carbide wafer value chain

In conclusion, the six-inch silicon carbide wafer space is at a pivotal juncture where materials innovation, supply chain strategy, and end-user demands intersect to determine commercial success. Technical progress in crystal growth, epitaxy, and defect control has expanded the frontier of device capabilities, while commercial forces-such as electrification and RF infrastructure expansion-have diversified the set of performance requirements that substrates must meet. As a result, suppliers and device makers face a dual imperative: continue advancing process capabilities while simultaneously designing more resilient and flexible sourcing models.

Near-term practical considerations for stakeholders include prioritizing wafer specifications that directly reduce qualification risk, aligning procurement practices with longer-term capacity commitments for core applications, and embracing collaborative models that couple co-development with secured supply. Looking ahead, firms that can translate technical differentiation into reliable, scalable production while mitigating geopolitical and tariff-induced uncertainties will secure competitive advantage. Ultimately, strategic clarity around segmentation, regional positioning, and partnership models will determine which players sustainably capture the value created by next-generation silicon carbide substrates.

Table of Contents

1. Preface

  • 1.1. Objectives of the Study
  • 1.2. Market Definition
  • 1.3. Market Segmentation & Coverage
  • 1.4. Years Considered for the Study
  • 1.5. Currency Considered for the Study
  • 1.6. Language Considered for the Study
  • 1.7. Key Stakeholders

2. Research Methodology

  • 2.1. Introduction
  • 2.2. Research Design
    • 2.2.1. Primary Research
    • 2.2.2. Secondary Research
  • 2.3. Research Framework
    • 2.3.1. Qualitative Analysis
    • 2.3.2. Quantitative Analysis
  • 2.4. Market Size Estimation
    • 2.4.1. Top-Down Approach
    • 2.4.2. Bottom-Up Approach
  • 2.5. Data Triangulation
  • 2.6. Research Outcomes
  • 2.7. Research Assumptions
  • 2.8. Research Limitations

3. Executive Summary

  • 3.1. Introduction
  • 3.2. CXO Perspective
  • 3.3. Market Size & Growth Trends
  • 3.4. Market Share Analysis, 2025
  • 3.5. FPNV Positioning Matrix, 2025
  • 3.6. New Revenue Opportunities
  • 3.7. Next-Generation Business Models
  • 3.8. Industry Roadmap

4. Market Overview

  • 4.1. Introduction
  • 4.2. Industry Ecosystem & Value Chain Analysis
    • 4.2.1. Supply-Side Analysis
    • 4.2.2. Demand-Side Analysis
    • 4.2.3. Stakeholder Analysis
  • 4.3. Porter's Five Forces Analysis
  • 4.4. PESTLE Analysis
  • 4.5. Market Outlook
    • 4.5.1. Near-Term Market Outlook (0-2 Years)
    • 4.5.2. Medium-Term Market Outlook (3-5 Years)
    • 4.5.3. Long-Term Market Outlook (5-10 Years)
  • 4.6. Go-to-Market Strategy

5. Market Insights

  • 5.1. Consumer Insights & End-User Perspective
  • 5.2. Consumer Experience Benchmarking
  • 5.3. Opportunity Mapping
  • 5.4. Distribution Channel Analysis
  • 5.5. Pricing Trend Analysis
  • 5.6. Regulatory Compliance & Standards Framework
  • 5.7. ESG & Sustainability Analysis
  • 5.8. Disruption & Risk Scenarios
  • 5.9. Return on Investment & Cost-Benefit Analysis

6. Cumulative Impact of United States Tariffs 2025

7. Cumulative Impact of Artificial Intelligence 2025

8. 6 Inch Silicon Carbide Wafer Market, by Wafer Type

  • 8.1. Bulk Substrate
  • 8.2. Epitaxial Wafer
  • 8.3. Polished Substrate

9. 6 Inch Silicon Carbide Wafer Market, by Crystal Structure

  • 9.1. 3C SiC
  • 9.2. 4H SiC
  • 9.3. 6H SiC

10. 6 Inch Silicon Carbide Wafer Market, by Doping Type

  • 10.1. N Type
  • 10.2. P Type
  • 10.3. Semi Insulating

11. 6 Inch Silicon Carbide Wafer Market, by Growth Technique

  • 11.1. Chemical Vapor Deposition
  • 11.2. Physical Vapor Transport
  • 11.3. Sublimation Epitaxy

12. 6 Inch Silicon Carbide Wafer Market, by Application

  • 12.1. LED Lighting
  • 12.2. MEMS And Sensors
  • 12.3. Power Electronics
    • 12.3.1. Electric Vehicle Charging
    • 12.3.2. Industrial Drives
    • 12.3.3. Renewable Energy Inverters
  • 12.4. Radio Frequency Devices
  • 12.5. Solar

13. 6 Inch Silicon Carbide Wafer Market, by End User

  • 13.1. Aerospace And Defense
  • 13.2. Automotive
    • 13.2.1. Conventional Vehicles
    • 13.2.2. Electric Vehicles
    • 13.2.3. Hybrid Vehicles
  • 13.3. Consumer Electronics
  • 13.4. Industrial
  • 13.5. Telecommunication

14. 6 Inch Silicon Carbide Wafer Market, by Region

  • 14.1. Americas
    • 14.1.1. North America
    • 14.1.2. Latin America
  • 14.2. Europe, Middle East & Africa
    • 14.2.1. Europe
    • 14.2.2. Middle East
    • 14.2.3. Africa
  • 14.3. Asia-Pacific

15. 6 Inch Silicon Carbide Wafer Market, by Group

  • 15.1. ASEAN
  • 15.2. GCC
  • 15.3. European Union
  • 15.4. BRICS
  • 15.5. G7
  • 15.6. NATO

16. 6 Inch Silicon Carbide Wafer Market, by Country

  • 16.1. United States
  • 16.2. Canada
  • 16.3. Mexico
  • 16.4. Brazil
  • 16.5. United Kingdom
  • 16.6. Germany
  • 16.7. France
  • 16.8. Russia
  • 16.9. Italy
  • 16.10. Spain
  • 16.11. China
  • 16.12. India
  • 16.13. Japan
  • 16.14. Australia
  • 16.15. South Korea

17. United States 6 Inch Silicon Carbide Wafer Market

18. China 6 Inch Silicon Carbide Wafer Market

19. Competitive Landscape

  • 19.1. Market Concentration Analysis, 2025
    • 19.1.1. Concentration Ratio (CR)
    • 19.1.2. Herfindahl Hirschman Index (HHI)
  • 19.2. Recent Developments & Impact Analysis, 2025
  • 19.3. Product Portfolio Analysis, 2025
  • 19.4. Benchmarking Analysis, 2025
  • 19.5. Coherent Corporation
  • 19.6. Fuji Electric Co., Ltd.
  • 19.7. GlobalWafers Co., Ltd.
  • 19.8. Infineon Technologies AG
  • 19.9. Mitsubishi Electric Corporation
  • 19.10. ON Semiconductor Corporation
  • 19.11. Resonac Holdings Corporation
  • 19.12. ROHM Co., Ltd.
  • 19.13. Semiconductor Components Industries, LLC
  • 19.14. SiCrystal GmbH
  • 19.15. SK Siltron Co., Ltd.
  • 19.16. STMicroelectronics N.V.
  • 19.17. Sumitomo Electric Industries, Ltd.
  • 19.18. TankeBlue Semiconductor Co., Ltd.
  • 19.19. Wolfspeed, Inc.
  • 19.20. Xiamen Powerway Advanced Material Co., Ltd.
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